Part Number
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TC58NVG1S3HBAI6 |
Manufacturer
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Toshiba |
Description
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2G-BIT (256M x 8 BIT) CMOS NAND E2PROM |
Published
|
Feb 15, 2017 |
Detailed Description
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TC58NVG1S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
|
TC58NVG1S3HBAI6
|
Overview
TC58NVG1S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG1S3HBAI6 is a single 3.
3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks.
The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
The TC58NVG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and da...
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