TOSHIBA
1l:518129~-10
SILICON GATE CMOS
131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.
The TC518129AFWI utilizes a one
transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
The TC518129AFWI operates from a single 5V power supply.
Refreshing is supported by a refresh (RFSHl input which enables two types of refreshing - auto refresh and self refresh.
The TC518129AFWI features a static RAM-like interface with a write
cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplif...