Part Number
|
TC55B329J-12 |
Manufacturer
|
Toshiba |
Description
|
32K x 9-Bit BiCMOS Static RAM |
Published
|
Feb 17, 2017 |
Detailed Description
|
TOSHIBA
1l:55B329P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 9 BIT BiCMOS STATIC RAM
Description
The TC55B329P/J is ...
|
Datasheet
|
TC55B329J-12
|
Overview
TOSHIBA
1l:55B329P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 9 BIT BiCMOS STATIC RAM
Description
The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply.
Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage.
All inputs and outputs are TTL compatible.
The TC55B329P/J is available in a 300mil wid...
Similar Datasheet