Part Number
|
TC554101J-25 |
Manufacturer
|
Toshiba |
Description
|
4-Bit Separate I/O CMOS SRAM |
Published
|
Feb 18, 2017 |
Detailed Description
|
TOSHIBA
112554101]-20/25/30
SILICON GATE CMOS
1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM
PRELIMINARY
Descri...
|
Datasheet
|
TC554101J-25
|
Overview
TOSHIBA
112554101]-20/25/30
SILICON GATE CMOS
1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM
PRELIMINARY
Description
The TC5541 01 J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply.
Toshiba's advanced CMOS technology and circuit design enable hi~peed operation.
The TC5541 01 J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access.
The TC5541 01 J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory.
All inputs and outputs are TTL compat...
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