JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-363 Power Management MOSFETs-
Schottky
CJ7203KDW N-channel MOSFET and
Schottky Barrier Diode
V(BR)DSS/VR
RDS(on)MAX
ID/IO
5Ω@10V 60V 340mA
5.
3Ω@5V
40V / 350mA
SOT-363
FEATURE
APPLICATION
z High density cell design for Low RDS（on）
z Load Switch for Portable Devices
z High saturation current capability
z DC/DC Converter
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Capacitance
MARKING
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter
1-MOSFET
VDS Drain-Sourc...