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Part Number
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CJCD2007 |
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Manufacturer
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JCET |
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Description
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Dual N-Channel MOSFET |
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Published
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Feb 22, 2017 |
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Detailed Description
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007
V(BR)DSS
20V
Dua...
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Datasheet
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CJCD2007
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Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
20 mΩ@10V 22 mΩ@4.
5V 24mΩ@3.
8V 26 mΩ@2.
5V 35mΩ@1.
8V
ID
7A
DFNWB2×3-6L-C
DESCRIPTION The CJCD2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction ...
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