JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TSSOP-8 Plastic-Encapsulate
Transistors
CJS6562
P-channel
V(BR)DSS
-20V
N- and P-Channel 12-V(G-S) MOSFET
RDS(on)MAX
50 mΩ@-4.
5V 90mΩ@-2.
5V
ID
-3.
5A
TSSOP8
N-channel
V(BR)DSS
20V
RDS(on)MAX
30mΩ@ 4.
5V 40mΩ@2.
5V
ID
4.
5A
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ=150℃)a
Ta=25℃ Ta=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)a
Power Dissipation a Maximum Junction-to-Ambienta
Ta=25℃ Ta=70℃
Operating Junction and Storage Temperature
Notes : a.
Surface Mounted on FR4 board, t≤10S
Symbol VDS ...