Part Number
|
UPD2118 |
Manufacturer
|
NEC |
Description
|
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
Published
|
Feb 24, 2017 |
Detailed Description
|
NEe Microcomputers, Inc.
16384 x 1 BIT DYNAMIC MOS
RANDOM ACCESS MEMORY
NEe
,uPD2118
,uPD2118-2
JI. PD2118-3
[~OO~[~~~~...
|
Datasheet
|
UPD2118
|
Overview
NEe Microcomputers, Inc.
16384 x 1 BIT DYNAMIC MOS
RANDOM ACCESS MEMORY
NEe
,uPD2118
,uPD2118-2
JI.
PD2118-3
[~OO~[~~~~ffirnW
DESCR IPTION
ThepPD2118 is a single +5V power supply, 16384 word by 1 bit Dynamic MOS RAM.
The IlPD2118 achieves high speed with low power dissipation by the use of single tran· sistor dynamic storage cell design and advanced dynamic circuitry.
This circuit design results in the minimizing of current transients typical of dynamic RAMS.
This in turn
II
results in high noise immunity of the IlPD2118 in a system environment.
By using a
multiplexing technique, the IlPD2118 can be packaged in an industry standard 16·Pin
Dip utilizing 7 address input pins for the 14 ...
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