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Part Number
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MTE2D4N06E3 |
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Manufacturer
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Cystech Electonics |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Feb 28, 2017 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 1/8
N-Channel Enhancem...
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Datasheet
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MTE2D4N06E3
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Overview
CYStech Electronics Corp.
Spec.
No.
: C933E3 Issued Date : 2013.
03.
20 Revised Date : Page No.
: 1/8
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06E3 BVDSS ID @VGS=10V
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
60V 120A 2.
6mΩ 2.
8mΩ
Features
• Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package
Symbol
MTE2D4N06E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
Package
MTE2D4N06E3-0-UB-S
TO-220 (Pb-free lead plating package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs /...
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