WPM1481
Single P-Channel, -12V, -5.
5A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.
022@ VGS=-4.
5V 0.
030@ VGS=-2.
5V 0.
045@ VGS=-1.
8V
ID (A) -5.
5 -4.
0 -2.
5
Descriptions
The WPM1481 is P-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WPM1481 is Pb-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN2*2-6L
WPM1481
Http://www.
sh-willsemi.
com
DFN2*2-6L
DDS 6 54
D
S
1 23 D...