HMC457QS16G / 457QS16GE
v03.
0907
InGaP HBT 1 WATT POWER AMPLIFIER, 1.
7 - 2.
2 GHz
11
Typical Applications
The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: • CDMA & W-CDMA • GSM, GPRS & Edge • Base Stations & Repeaters
Features
Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.
4 mm2 Included in the HMC-DK002 Designer’s Kit
LINEAR & POWER AMPLIFIERS - SMT
Functional Diagram
General Description
The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers...