Part Number
|
4N60I |
Manufacturer
|
HAOHAI |
Description
|
N-Channel MOSFET |
Published
|
Mar 12, 2017 |
Detailed Description
|
4A, 600V, N【】
FQU4N60 FQD4N60
H
H4N60I H4N60S
4N60 HAOHAI
N-Channel Power Field Effect Transistoe SGS, RoHS...
|
Datasheet
|
4N60I
|
Overview
4A, 600V, N【】
FQU4N60 FQD4N60
H
H4N60I H4N60S
4N60 HAOHAI
N-Channel Power Field Effect Transistoe SGS, RoHS
TO-251 TO-252
IS
TO-251 TO-252
80Pcs 4000Pcs 2.
5K 5000Pcs
40000Pcs 50000Pcs
Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
Features ■Higher Current Rating ■Lower RDS(on) ■Lower Capacitances ■Lower Total Gate Charge ■Tighter VSD Specifications ■Avalanc...
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