Part Number
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MSN0620Z |
Manufacturer
|
MORESEMI |
Description
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N-Channel Enhancement Mode Power MOS FET |
Published
|
Mar 13, 2017 |
Detailed Description
|
MSN0620Z
60V(D-S) N-Channel Enhancement Mode Power MOS FET
Genera Features
● VDS =60V,ID =20A RDS(ON) 44mΩ @ VGS=10V
●...
|
Datasheet
|
MSN0620Z
|
Overview
MSN0620Z
60V(D-S) N-Channel Enhancement Mode Power MOS FET
Genera Features
● VDS =60V,ID =20A RDS(ON) 44mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0620Z
MSN0620Z
TO-251
Reel Size -
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