Part Number
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MSN0860Z |
Manufacturer
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MORESEMI |
Description
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N-Channel Enhancement Mode Power MOS FET |
Published
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Mar 13, 2017 |
Detailed Description
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MSN0860Z
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● VDS=75V;ID=60A@ VGS=10V; RDS(ON)8.5mΩ @ VGS=10V...
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Datasheet
|
MSN0860Z
|
Overview
MSN0860Z
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● VDS=75V;ID=60A@ VGS=10V; RDS(ON)8.
5mΩ @ VGS=10V
● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
Schematic diagram
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Dev...
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