Part Number
|
S29WS128P |
Manufacturer
|
Cypress Semiconductor |
Description
|
Simultaneous Read/Write Flash |
Published
|
Mar 13, 2017 |
Detailed Description
|
S29WS512P S29WS256P S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash
Features
Sing...
|
Datasheet
|
S29WS128P
|
Overview
S29WS512P S29WS256P S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.
8 V, Simultaneous Read/Write Flash
Features
Single 1.
8 V read/program/erase (1.
70–1.
95 V) 90 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency Random page read access mode of 8 words with 20 ns intra page
access time 32 Word / 64 Byte Write Buffer Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively Four 16 Kword sectors at both top and bottom of memory array 510/254/126 64Kword sectors (WS512/256/128P) Programmable linear (8/16/32) with or without wrap around and
continuous burst read modes Secured Silicon Sector region consisting of 128 words...
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