S29VS064R S29XS064R 64 Mbit (4M x 16-bit), 1.
8 V, Multiplexed, Burst, MirrorBit® Flash Distinctive Characteristics  Single 1.
8 volt read, program and erase (1.
7 to 1.
95 volt)  VersatileIO™ Feature – Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VCCQ pin – 1.
8 V compatible I/O signals  Address and Data Interface Options – Address and Data Multiplexed for reduced I/O count (ADM) S29VS-R – Address-High, Address-Low, Data Multiplexed for minimum I/O count (AADM) S29XS-R  Simultaneous Read/Write operation – Data can be continuously read from one bank while executing erase/program functions in other bank – Zero latency between read...

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