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CY7C1426KV18

Part Number CY7C1426KV18
Manufacturer Cypress Semiconductor
Description 36-Mbit QDR II SRAM Four-Word Burst Architecture
Published Mar 14, 2017
Detailed Description CY7C1411KV18/CY7C1426KV18 CY7C1413KV18/CY7C1415KV18 36-Mbit QDR® II SRAM Four-Word Burst Architecture 36-Mbit QDR® II S...
Datasheet CY7C1426KV18





Overview
CY7C1411KV18/CY7C1426KV18 CY7C1413KV18/CY7C1415KV18 36-Mbit QDR® II SRAM Four-Word Burst Architecture 36-Mbit QDR® II SRAM Four-Word Burst Architecture Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) Interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Single mult...






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