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CY7C2245KV18

Part Number CY7C2245KV18
Manufacturer Cypress Semiconductor
Description 36-Mbit QDR II+ SRAM Four-Word Burst Architecture
Published Mar 14, 2017
Detailed Description CY7C2245KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) with ODT 36-Mbit QDR® II+ SRAM...
Datasheet CY7C2245KV18




Overview
CY7C2245KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.
0 Cycle Read Latency) with ODT 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.
5 Cycle Read Latency) with ODT Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 450 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz ■ Available in 2.
0 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Data valid pin (QVLD) to indicate va...






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