Part Number
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CY7C2245KV18 |
Manufacturer
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Cypress Semiconductor |
Description
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36-Mbit QDR II+ SRAM Four-Word Burst Architecture |
Published
|
Mar 14, 2017 |
Detailed Description
|
CY7C2245KV18
36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) with ODT
36-Mbit QDR® II+ SRAM...
|
Datasheet
|
CY7C2245KV18
|
Overview
CY7C2245KV18
36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.
0 Cycle Read Latency) with ODT
36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.
5 Cycle Read Latency) with ODT
Features
■ Separate independent read and write data ports ❐ Supports concurrent transactions
■ 450 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces on both read and write ports
(data transferred at 900 MHz) at 450 MHz ■ Available in 2.
0 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems ■ Data valid pin (QVLD) to indicate va...
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