CY62157H MoBL®
8-Mbit (512K words × 16 bit) Static RAM with Error Correcting Code (ECC)
8-Mbit (512K words × 16 bit) Static RAM with Error Correcting Code (ECC)
Features
■ Ultra-low standby current ❐ Typical standby current: 5.
5A ❐ Maximum standby current: 16 A
■ High speed: 45 ns
■ Voltage range: 2.
2 V to 3.
6 V
■ Embedded Error Correcting Code (ECC) for single-bit error correction
■ 1.
0 V data retention
■
Transistor-
transistor logic (TTL) compatible inputs and outputs
■ Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages
Functional Description
CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error Correcting Code.
ECC logic can detect and correct ...