FM18W08 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ SRAM and EEPROM compatible ❐ Industry-standard 32 K × 8 SRAM and EEPROM pinout ❐ 70-ns access time, 130-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibrat...

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