DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• High Density UMOS with
Schottky Barrier Diode • Low Leakage Current at High Temp.
• High Conversion Efficiency • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency • 100% UIS and Rg Tested • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram...