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Part Number
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WFF9N90 |
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Manufacturer
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Winsemi |
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Description
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Silicon N-Channel MOSFET |
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Published
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Mar 21, 2017 |
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Detailed Description
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WFF9N90 Product Description
Silicon N-Channel MOSFET
Features
� 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V � Ultra-low Gate charg...
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Datasheet
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WFF9N90
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Overview
WFF9N90 Product Description
Silicon N-Channel MOSFET
Features
� 9A,900V,RDS(on)(Max1.
35Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
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