WFP13N50C Product Description
Silicon N-Channel MOSFET
Features
� 13A,500V, RDS(on)(Max0.
49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based process.
This technology improves the performances compared with standard parts from various sources.
All of these power MOSFETs are designed for applications in switching
regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching
transistors demanding high speed and low gate drive power.
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Absolute Maximum Ratings
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