|
Part Number
|
WFP5N80 |
|
Manufacturer
|
Winsemi |
|
Description
|
Silicon N-Channel MOSFET |
|
Published
|
Mar 22, 2017 |
|
Detailed Description
|
Features
� 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Av...
|
|
Datasheet
|
WFP5N80
|
Overview
Features
� 4.
5A,800V,RDS(on)(Max2.
5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP5N80
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS I...
Similar Datasheet