Part Number
|
WFU7N65S |
Manufacturer
|
Winsemi |
Description
|
Power MOSFET |
Published
|
Mar 26, 2017 |
Detailed Description
|
WFU7N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS...
|
Datasheet
|
WFU7N65S
|
Overview
WFU7N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ.
Qg =19nC) � 100% UIS tested � RoHS compl iant
General Description
Power MOSFET is fabricated using advanced super junction technology.
The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current (Tc=25℃)
(Tc=100℃)
IDM Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1) Total ...
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