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Part Number
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WFF12N70S |
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Manufacturer
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Winsemi |
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Description
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Power MOSFET |
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Published
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Mar 27, 2017 |
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Detailed Description
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WFF12N70S
700V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UI...
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Datasheet
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WFF12N70S
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Overview
WFF12N70S
700V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ.
Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction technology.
The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID I DM
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Drain Current Pulsed 1)
VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Pulse Avalanche Current 1)
EAR Repetit...
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