Part Number
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WFJ8N65B |
Manufacturer
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Winsemi |
Description
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Power MOSFET |
Published
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Mar 27, 2017 |
Detailed Description
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Features
� 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%A...
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Datasheet
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WFJ8N65B
|
Overview
Features
� 7.
5A,650V,RDS(on)(Max1.
3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFJ8N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology.
this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology li ne a electronic lamp ball ast, high efficiency switched mode power suppli es, active power factor correction.
Absolut...
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