DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2726UT1A
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications.
1.
27
FEATURES • Low on-state resistance
RDS(on)1 = 7.
0 mΩ MAX.
(VGS = 10 V, ID = 10 A) RDS(on)2 = 11.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 10 A) • Low input capacitance Ciss = 1720 pF TYP.
(VDS = 15 V, VGS = 0 V) • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) Drain Current (pu...