Part Number
|
AP85L02H |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Apr 2, 2017 |
Detailed Description
|
AP85L02H/J
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low Gate Charge ▼ Simple Drive ...
|
Datasheet
|
AP85L02H
|
Overview
AP85L02H/J
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching
Description
G
D S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP85L02J) is available for low-profile applications.
BVDSS RDS(ON) ID
25V 6mΩ 85A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power ...
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