MOS-TECH Semiconductor Co.
,LTD
P-Channel Enhancement Mode Field Effect
Transistor
MT3401A
Product Summary
VDS= -30V ID= -4.
2A (VGS= -10V)
≦ ΩRDS(ON) 60m @VGS= -10V ≦ ΩRDS(ON) 75m @VGS= -4.
5V ≦ ΩRDS(ON) 120m @VGS= -2.
5V
Applications：
▪ Power Management in Notebook Computer ▪ Portable Equipment and Battery Powered Systems
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
RoHS Compliant.
SOT-23-3L Package.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS ID IDM IS PD
TJ, TSTG
Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Contin...