Mos-Tech Semiconductor Co.
,LTD.
P-Channel Enhancement Mode Field Effect
Transistor
MT301
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252-5L package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-30V -30A
28@ VGS=-10V 35 @ VGS=-4.
5V
NOTE：The MT301 is available in a lead-free package
S1 S2
G1 G2 D1 D2
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
-30 ±20 -30
- Pulse d b
IDM -125
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,T...