Mos-Tech Semiconductor Co.
,LTD.
MT4936
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SO-8 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
30V 6.
6A
32@ VGS=10V 43@ VGS=4.
5V
NOTE:The MT4936 is available in a lead-free package
D1 G1
D2 G2
S1 S2
ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
30 ±20 6.
6
- Pulse d b
IDM 28
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
1.
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