Mos-Tech Semiconductor Co.
,LTD.
P-Channel Enhancement Mode Field Effect
Transistor
MT6401
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-28V - 5.
6A
45@ VGS=-10V 55 @ VGS=-4.
5V
NOTE：The MT6401 is available in a lead-free package
D
S G
G
S D
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter Sym
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
bol
VDS
VGS ID
Limit
-28
±20 -5.
6
- Pulse d b
IDM -25
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TST...