Mos-Tech Semiconductor Co.
,LTD.
MT3055L
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
25V 15A
55 @ VGS=4.
5V 60 @ VGS=2.
5V
NOTE:The MT3055L is available in a lead-free package
S GG
D
S
D
G S
ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
25 ±12 15
- Pulse d b
IDM 48
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
...