Mos-Tech Semiconductor Co.
,LTD.
MT9926
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package
NOTE：The MT9926 is available in a lead-free package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
20V 6A
22 @ VGS=4.
5V 35 @ VGS=2.
5V
D1 D2
G1 S1
G2 S2
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
20 ±12
6
- Pulse d b
IDM 20
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
1.
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