Mos-Tech Semiconductor Co.
,LTD.
MT8205A
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSSOP-8 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
20V 6A
20 @ VGS=4.
5V 28 @ VGS=2.
5V
NOTE：The MT8205A is available in a lead-free package
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
20 ±12
6
- Pulse d b
IDM 20
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
1.
7 2.
5
-55 to 150
...