MDS1951– Single N-Channel Trench MOSFET 60V MDS1951 Single N-Channel Trench MOSFET 60V, 6A, 45mΩ General Description The MDS1951 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.
Features  VDS = 60V  ID = 6A @VGS = 10V  RDS(ON) 45mΩ @ VGS = 10V 55mΩ @ VGS = 4.
5V Applications  Inverters  General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(2) Characteristics Pulsed Drain Current Power Dissipation for Single Operation Single Pulse Avalanche En...

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