Part Number
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MDS3753E |
Manufacturer
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MagnaChip |
Description
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P-channel MOSFET |
Published
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Apr 10, 2017 |
Detailed Description
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MDS3753E– P-Channel Trench MOSFET
MDS3753E
P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ
General Description
The MDS3753E...
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Datasheet
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MDS3753E
|
Overview
MDS3753E– P-Channel Trench MOSFET
MDS3753E
P-Channel Trench MOSFET, -40V, -7.
1A, 30mΩ
General Description
The MDS3753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Low RDS(ON) and low gate charge operation offer superior benefit in the application.
Features
VDS = -40V
ID = -7.
1A @ VGS = 10V
RDS(ON)
30m @ VGS = -10V
37m @ VGS = -4.
5V
Applications
Inverters General purpose applications
D
8(D)7(D)6(D)5(D)
1(S)2(S)3(S) 4(G)
G S
Absolute Maximum Ratings (TA =25oC unless otherwise noted)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain C...
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