RU60D5H N-Channel Advanced Power MOSFET Features • 60V/5.
4A, RDS (ON) =32m (Typ.
) @ VGS=10V RDS (ON) =40m (Typ.
) @ VGS=4.
5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description SOP-8 Applications • Power Management • Load Switch • DC/DC Converter Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RJA Continuous ...

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