|
Part Number
|
RU6888M |
|
Manufacturer
|
Ruichips |
|
Description
|
N-Channel Advanced Power MOSFET |
|
Published
|
Apr 10, 2017 |
|
Detailed Description
|
RU6888M
N-Channel Advanced Power MOSFET
Features
• 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
...
|
|
Datasheet
|
RU6888M
|
Overview
RU6888M
N-Channel Advanced Power MOSFET
Features
• 60V/62A, RDS (ON) =7mΩ(Typ.
)@VGS=10V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
PDFN5060
Applications
• Power Management.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
Copyright Ruichips Semiconducto...
Similar Datasheet