Part Number
|
RU6Z8R |
Manufacturer
|
Ruichips |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Apr 10, 2017 |
Detailed Description
|
RU6Z8R
N-Channel Advanced Power MOSFET
Features
• 650V/8A,
RDS (ON) =900mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design...
|
Datasheet
|
RU6Z8R
|
Overview
RU6Z8R
N-Channel Advanced Power MOSFET
Features
• 650V/8A,
RDS (ON) =900mΩ(Typ.
)@VGS=10V
• Super High Dense Cell Design • Fast Switching • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High efficiency switch mode power supplies • Lighting
TO220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
...
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