Part Number
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MDS5601 |
Manufacturer
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MagnaChip |
Description
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Dual N-Channel Trench MOSFET |
Published
|
Apr 10, 2017 |
Detailed Description
|
MDS5601 – Dual N-Channel Trench MOSFET
MDS5601
Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ
General Description
The...
|
Datasheet
|
MDS5601
|
Overview
MDS5601 – Dual N-Channel Trench MOSFET
MDS5601
Dual N-channel Trench MOSFET 30V, 12.
9A, 10.
5mΩ
General Description
The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDS5601 is suitable for DC/DC converter and general purpose applications.
Features
à VDS = 30V à ID = 12.
9A @VGS = 10V à RDS(ON)
10.
5mΩ @VGS = 10V 16.
1mΩ @VGS = 4.
5V à 100% UIL Tested à 100% Rg Tested
8(D17)(D16)(D2)5(D2)
4(G2) 2(G13) (S2) 1(S1)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation...
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