Part Number
|
MDU5593S |
Manufacturer
|
MagnaChip |
Description
|
Dual N-Channel Trench MOSFET |
Published
|
Apr 10, 2017 |
Detailed Description
|
MDU5593S - Dual N-Channel Trench MOSFET 30V
MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
T...
|
Datasheet
|
MDU5593S
|
Overview
MDU5593S - Dual N-Channel Trench MOSFET 30V
MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5593S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDU5593S is suitable for DC/DC converter and general purpose applications.
Features
FET1
FET2
VDS = 30V ID = 34A
VDS = 30V ID = 40A @VGS = 10V
RDS(ON) 8.
0mΩ 11.
0mΩ
3.
3mΩ @VGS = 10V 5.
0mΩ @VGS = 4.
5V
100% UIL Tested
100% Rg Tested
5 S1/D2
S2
6
S2 S2
7 G2
8
1 2 3 4
D1 3 D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltag...
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