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Part Number
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MDIS2N65B |
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Manufacturer
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MagnaChip |
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Description
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N-Channel Trench MOSFET |
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Published
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Apr 10, 2017 |
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Detailed Description
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MDIS2N65B N-channel MOSFET 650V
MDIS2N65B
N-Channel MOSFET 650V, 1.95A, 4.5Ω
General Description
The MDIS2N65B uses ad...
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Datasheet
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MDIS2N65B
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Overview
MDIS2N65B N-channel MOSFET 650V
MDIS2N65B
N-Channel MOSFET 650V, 1.
95A, 4.
5Ω
General Description
The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications.
Features
VDS = 650V ID = 1.
95A RDS(ON) ≤ 4.
5Ω
@VGS = 10V @VGS = 10V
Applications
Power supply Battery charger Ballast
G DS
TO-251-VS (I-PAK-VS)
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche En...
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