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Part Number
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MDI1N60S |
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Manufacturer
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MagnaChip |
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Description
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N-Channel Trench MOSFET |
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Published
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Apr 10, 2017 |
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Detailed Description
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MDI1N60S N-channel MOSFET 600V
MDI1N60S
N-Channel MOSFET 600V, 1.0A, 8.5Ω
General Description
The MDI1N60S uses advanc...
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Datasheet
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MDI1N60S
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Overview
MDI1N60S N-channel MOSFET 600V
MDI1N60S
N-Channel MOSFET 600V, 1.
0A, 8.
5Ω
General Description
The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose applications.
Features
VDS = 600V ID = 1.
0A RDS(ON) ≤ 8.
5Ω
@VGS = 10V @VGS = 10V
Applications
Power supply Battery charger Ballast
IPAK (Short lead)
G
D S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse A...
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