DG18N50
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.
0
General Description
DG18N50N，， ，，，。 ，，。
DG18N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS
VDSS ID
RDS(ON) Crss
500 18 0.
26 25
V A Ω pF
Symbol Package
1 /9
ABSOLUTE MAX...