DG1N60
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.
0
General Description
DG1N60N，， ，，，。 ，，。
DG1N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAINCHARACTERISTICS
VDSS ID
RDS(ON) Crss
600 1.
3 9.
0 5.
0
V A Ω pF
Symbol
Package
1 /11
ABSOLUTE MAXIM...