BYD Microelectronics Co.
, Ltd.
BF912N60/ BF912N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V z ID =12A z RDS(ON) =0.
5 Ω TYP(VGS=10V,ID=6.
0A)
z Low CRSS (typical 17pF) z Fast switching
Absolute Maximum Ratings...