BYD Microelectronics Co.
, Ltd.
BF9035SNZ-M
30V N-Channel MOSFET
General Description
The BF9035SNZ-M is a Single N-channel MOS Field Effect
Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This is applied to electronic systems as a power switch.
Features
z VDS=30 V z ID=4A z Low on-state resistance
RDS (on) 65mΩ (VGS=10V，ID=2.
0A) RDS (on) 80mΩ (VGS=4.
5V，ID=2.
0A) RDS (on) 95mΩ (VGS=3.
0V，ID=2.
0A)
z Lead Pb-free and Halogen-free
Absolute Maximum Ratings(TC = 25℃)
Symbol VDS ID IDM VGS PD
TJ,Tstg TL
Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Power Dissipation TC = 25°...