|
Part Number
|
TSU630M |
|
Manufacturer
|
Truesemi |
|
Description
|
N-Channel MOSFET |
|
Published
|
Apr 13, 2017 |
|
Detailed Description
|
TSD630M/TSU630M
TSD630M/TSU630M
200V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi...
|
|
Datasheet
|
TSU630M
|
Overview
TSD630M/TSU630M
TSD630M/TSU630M
200V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 7.
8A,200V,Max.
RDS(on)=0.
4 Ω @ VGS =10V • Low gate charge(typical 20nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
Absolute Maximum Ratings T...
Similar Datasheet